低噪聲1.21.8GHz致冷FET放大器
A LOW-NOISE 1.2-1.8 GHz COOLED GaAs FET AMPLIFIER
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摘要: 本文介紹了低噪聲1.21.8 GHz致冷FET放大器的研制工作。在20K環(huán)境溫度下,帶寬1.21.7GHz范圍內(nèi),放大器噪聲溫度低于10K,最佳為4K。增益約30dB。設(shè)計了一個噪聲溫度自動測試系統(tǒng)。另外對輸入電纜的噪聲和總測量誤差作了分析。測試總誤差為2K。
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關(guān)鍵詞:
Abstract: A low-noise 1.2-1.8 GHz cooled GaAs FET amplifier with mixer bias circuit is reported. The amplifier noise temperature obtained at 20 K ambient in the frequency range of 1.2-1.7 GHz is 10 K. The lowest noise temperature is 4 K. The gain is about 30 dB. An automatic measuring instrument for noise temperature was designed. The noise effect of the input cable and the error analysis of total measuring were made. The total measurement error is 2 K. -
S. Weinreb, Electronics Division Internal Report No. 220, NRAO, Sept. 1981.[2]D. R. Williams, W. Lum and S, Weinreb, Micrvmavc J., 23(1980), 73.[3]S. Weinreb, IEEE Trans. on MTT, MTT-28(1980), 1041.[4]C. A. Liechti and R. A. Larrick, ibid.,MTT-24(1976), 376.[5]P. Wolf, IBM J. Res. Develop., 14(1970), 125.[6]M. Schneider, Bell Sys. Tech. J., 48(1969), 1421.[7]T. Suzuki, A. Nara, M. Nakatoni and T. Ishii, IEEE Trans. on MTT, MTT-17(1979), 1070.[8]H. Fukui, ibid., MTT-27(1979), 643. -
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