摻雜聚乙烯咔唑的有機二極管的伏安特性
CURRENT-VOLTAGE CHARACTERISTICS OF ORGANIC DIODE DOPED WITH POLY-(N-VINYLCARBAZOLE)
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摘要: 本文提出了一種摻雜具有空穴導電特性的聚合物來改變有機二極管伏安特性的新方法。在導電玻璃上利用甩膠法分別制得兩類有機薄膜層:聚烷基噻吩和摻雜不同量聚乙烯咔唑的聚烷基噻吩。將鋁沉積在這些有機薄膜上作為有機二極管的負極。實驗發(fā)現(xiàn),摻雜聚合物的有機二極管電流電壓非線性特性得到增強,經冪函數曲線擬合,若摻雜量適中,冪指數存在著一個最大值。
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關鍵詞:
- 聚烷基噻吩; 聚乙烯咔唑; 有機二極管
Abstract: A new method was presented to improve organic diode current-voltage (I-V) characteristics by using doped p-type material. The organic diodes with one-layer poly (3-alkylthiophene) (PAn=8T) and PAn=8T doped with various amounts of poly (N-vinylcarbazole) (PVK) (Pan=8T/PVK) sandwiched between an indium/tin oxide (ITO) and an aluminium cathode were fabricated by spin coating onto ITO respectively. It was found that the I-V characterisitcs were improved by doping with PVK in PAn=8T diode, and it was known that the exponent of the fitting equation has a maximum value by the best fit power curve if the doped PVK amount is moderate. -
Gustafsson G, Cao Y, Elexible G M, et al. Natue, 1992, 357 (11): 477-479.[2]Yoshino K, Nakajima S, et al. Jpn J. Appl. Phys., 1988, 27(4): L716-L718.[3]Yoshino K, et al. Jpn J. Appl. Phys., 1988, 27(12): L2388-L2391.[4]Yoshino K, et al. Solid State Commun., 1989, 89(2): L43-L45.[5]Baugamean R A, Breads J L, et al. Chem[J].Rev.1982, 82(2):209-222[6]Donald A, S. Electronic Properties of Polymers. New York: Academic Press, 1982, 32-38.[7]Ohmori Y, et al. Jpn J. Appl. Phys., 1991, 30(11b): L1933-L1940. -
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