集成運(yùn)算放大器參數(shù)時漂的1/f噪聲預(yù)測方法
1/F NOISE AS A PREDICTION OF LONG-TERM DRIFT FOR INTEGRATED OPERTIONAL AMPLIFIERS
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摘要: 壽命試驗和噪聲測試結(jié)果表明,如果集成運(yùn)算放大器的主要失效模式是輸入偏置電流或失調(diào)電流隨時間的漂移,則這種漂移量與運(yùn)放的1/f噪聲電流具有強(qiáng)相關(guān)性,二者近似呈正比關(guān)系。理論分析表明,這種漂移可歸因于作為1/f噪聲直接起源的氧化層陷阱對硅中電子的慢俘獲作用。據(jù)此,提出了通過1/f噪聲測量對集成運(yùn)放特定參數(shù)時漂進(jìn)行快速無損評估的方法。
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關(guān)鍵詞:
- 1/f噪聲; 運(yùn)算放大器; 漂移; 氧化層陷阱
Abstract: It is shown from the accelerated lifetime test and noise measurement for integrated operational amplifiers that if their failure is caused by the drift of input bias current or input offset current, the drift is strongly correlated with 1/f noise current in these devices, and both are proportional approximately. In the mechanism analysis, the drift may be attributed to the slow capture effect of oxide traps, which are 1/f noise sources, on the electrons in silicon. Therefore, 1/f noise measurement can be used as a fast and non-destructive tool to evaluate the long term instability of integrated operational amplifiers. -
Jones B K. Electrical noise as a measure of quality and reliability in electron devices. Advances in Electronics and Electron Physics, New Yotk: Academic Press, Inc., 1994, 87, 1-204.[2]莊奕琪,孫青.半導(dǎo)體器件中的噪聲及其低噪聲化技術(shù).北京:國防工業(yè)出版社,1993年,第5章和第7章.[3]Zhuang Yiqi, Sun Qing. IEEE Trans. on ED, 1991, ED-38(11): 2540-2547. -
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